Semiconductor laser modules, also known as "semiconductor laser modules", are a class of lasers with earlier maturity and faster progress. Because of its wide wavelength range, simple production, low cost, easy mass production, and because of its small size, light weight, and long life, it has developed rapidly in varieties and has a wide range of applications, with more than 300 species. Semiconductor laser modules have been widely used in laser ranging, lidar, ignition and detonation, detection instruments, etc., forming a broad market.
The most important application field of semiconductor laser modules is Gb local area network, and the semiconductor laser modules of 850nm wavelength are suitable for) 1Gh/. Local area network, semiconductor laser modules with wavelengths of 1300nm -1550nm are suitable for 1OGb local area network system i1. The application range of semiconductor laser modules covers the entire field of optoelectronics and has become the core technology of today's optoelectronics science.
application:
Application of semiconductor laser module in semiconductor laser marking machine:
Semiconductor laser modules have become a hot-selling product in 2010 due to a series of advantages such as long service life, high laser utilization efficiency, smaller thermal energy than YAG lasers, small size, high cost performance, and low power consumption. The emergence of semiconductor laser modules has accelerated the pace of replacing the market share of YAG laser marking machines with semiconductor laser machines with semiconductor laser modules as the main consumables.
Introduction:
Semiconductor laser modules are also called laser diodes (LDs). In the 1980s, people absorbed the latest achievements in the development of semiconductor physics, adopted novel structures such as quantum well (QW) and strained quantum well (SL-QW), and introduced refractive index modulation Bragg emitters and enhanced modulation Bragg emitters. With the latest technology, new crystal growth technologies such as MBE, MOCVD and CBE have also been developed, so that the new epitaxial growth process can precisely control crystal growth, achieve the precision of atomic layer thickness, and grow high-quality quantum well and strained quantum well materials. Therefore, the threshold current of the produced LD is significantly reduced, the conversion efficiency is greatly improved, the output power is doubled, and the service life is also significantly prolonged.
A low power LD
The development of low-power LDs used in the field of information technology is extremely fast. For example, distributed feedback (DFB) and dynamic single-mode LD for optical fiber communication and optical switching systems, narrow linewidth tunable DFB-LD, and visible light wavelengths (such as wavelengths of 670nm, 650nm, 630nm) used in information processing technology fields such as optical discs (red light to blue-green light) LD, quantum well surface emitting laser and ultrashort pulse LD have all been substantially developed. The development characteristics of these devices are: single-frequency narrow linewidth, high speed, tunable and short-wavelength and optoelectronic monolithic integration.
B high power LD
In 1983, the output power of a single LD with a wavelength of 800nm exceeded 100mW. By 1989, the LD with a width of 0.1mm reached a continuous output of 3.7W, while the 1cm linear array LD had reached an output of 76W, with a conversion efficiency of 39%. In 1992, Americans raised the index to a new level: the output power of 1cm linear array LD continuous wave reached 121W, and the conversion efficiency was 45%. Many high-power LDs with output power of 120W, 1500W, and 3kW have been launched. The rapid development of high-efficiency, high-power LDs and their arrays also provides strong conditions for the rapid development of all-solid-state lasers, that is, semiconductor laser-pumped (LDP) solid-state lasers.
In recent years, in order to meet the needs of EDFA and EDFL, high-power LDs with a wavelength of 980 nm have also developed greatly. Recently, the fiber Bragg grating is used as a frequency-selective filter, which greatly improves the output stability and the pumping efficiency.
Features and application range:
Semiconductor diode lasers are the most practical class of lasers. It is small in size, long in life, and can be pumped by a simple current injection method. Its operating voltage and current are compatible with integrated circuits, so it can be monolithically integrated. And can also directly conduct current modulation with frequencies up to GHz to obtain high-speed modulated laser output. Due to these advantages, semiconductor diode lasers have been widely used in laser communication, optical storage, optical gyroscope, laser printing, ranging and radar.
Common typical wavelengths:
Standard and non-standard packaged semiconductor laser modules. Typical wavelength: 635nm, 65Onm, 660nm, 670nm, 690nm, 780nm, 83Onm, 860nm, 915nm, 940nm and 1064nm, 131Onm, 1480nm. Single die power from 50mw to 7000mw; single Bar continuous output power > 40w, 100 watts cw Array, kilowatt-class Qcw array
Laser equipment application:
The wavelengths of semiconductor laser modules commonly used in laser marking machines are 1064nm, 532nm, 808nm, etc. Generally speaking, 1064nm semiconductor laser modules are water-cooled. The low-power 532nm and 808nm semiconductor laser modules generally use air cooling.
